VBsemi(微碧半导体)China
WNMD2160-VB
Transistors - FETs, MOSFETs - SingleSOT23-6；2个N—Channel沟道,20V；6A；RDS(ON)=24mΩ@VGS=4.5V,VGS=12V；Vth=0.5~1.5V；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current6 A
On-resistance28 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 6A |
| Other | |
| 导通电阻(RDS(on)) | 28mΩ@2.5V |
| 数量 | 2个N沟道 |