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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drain to Source Voltage (Vdss)30V
Power - Max200mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Other
Base Product NumberSSM6N44
FET FeatureStandard
FET Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds8.5pF @ 3V
MfrToshiba Semiconductor and Storage
Product StatusActive
Rds On (Max) @ Id, Vgs4Ohm @ 10mA, 4V
Series-
Vgs(th) (Max) @ Id1.5V @ 100µA

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