Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 1A DO214AC
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View full reportTechnical parameters
Key specs
Average rectified current1 A
Forward voltage1.1 VMax · 1 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Other | |
| Base Product Number | S1M |
| Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.5 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |