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Technical parameters

Power
Current - Drain (Idss) @ Vds (Vgs=0)20 mA @ 15 V
Drain to Source Voltage (Vdss)30 V
Power - Max400 mW
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id5 V @ 10 nA
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Other
Base Product NumberJ174
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds8pF @ 10V (VGS)
MfrNXP USA Inc.
Product StatusObsolete
Resistance - RDS(On)85 Ohms
Series-

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