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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current115 mA
On-resistance7.5 ΩMax · 50mA
Power
Current - Continuous Drain (Id) @ 25°C115mA (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)200mW (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

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