BORN(伯恩半导体)China
MOSFET,N-channel 60V/20V 0.2A VGS(th)=1V 7.5Ω（MAX)0,SOT-23
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current200 mA
On-resistance7.5 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 200mA |
| Other | |
| 导通电阻(RDS(on)) | 7.5Ω@10V |
| 数量 | 1个N沟道 |