Central Semiconductor CorpUnited States

2N4871

ObsoleteTransistors - Bipolar (BJT) - SingleTO-92

TRANS PNP TO92

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Technical parameters

Key specs

TypePNP
Power300 mWMax
Power
Current - Collector Cutoff (Max)-
Power - Max300 mW
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~125°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic-

Documents

DatasheetDatasheet · 530.5 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 9.7 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 2.1 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.7 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.0 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.0 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 649.2 KB · 2026-09-22EnvironmentalEnvironmental · 558.9 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 550.2 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 416.3 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 107.1 KB · 2026-09-22PCN & ErrataPCN & Errata · 78.3 KB · 2026-09-22
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