栅极驱动器
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| 对比 | 产品型号 | 品牌 | 分类 | 产品描述 | 技术资料 | 替代 | 操作 |
|---|---|---|---|---|---|---|---|
| 栅极驱动器 | IC GATE DRIVER LOW-SIDE 5A 8-MLP | 数据手册1 | 查看详情 | ||||
| 栅极驱动器 | IC GATE DRIVER LOW-SIDE 4A SOT-23-5 | 数据手册1 | 查看详情 | ||||
| 栅极驱动器 | 3-PHASE BRIDGE DRIVER 250V 5-20V QFN-24 | 数据手册1 | 查看详情 | ||||
| 栅极驱动器 | 查看详情 | ||||||
| 栅极驱动器 | 12x Low-Side for 3 Stepper Motors with Stall Detection | 查看详情 | |||||
| 栅极驱动器 | The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns. The UCC27517A-Q1 device handles –5 V at input. The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at V DD = 12 V. The UCC27517A-Q1 operates over a wide V DD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on V DD pin holds the output low outside V DD operating range. The ability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices. | 数据手册3 | 查看详情 | ||||
| 栅极驱动器 | 数据手册3 | 查看详情 | |||||
| 栅极驱动器 | 数据手册2 | 查看详情 | |||||
| 栅极驱动器 | 数据手册3 | 查看详情 | |||||
| 栅极驱动器 | 数据手册2 | 查看详情 | |||||
| 栅极驱动器 | 数据手册1 | 查看详情 | |||||
| 栅极驱动器 | 查看详情 | ||||||
| 栅极驱动器 | 查看详情 | ||||||
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| 栅极驱动器 | 查看详情 | ||||||
| 栅极驱动器 | 查看详情 | ||||||
| 栅极驱动器 | 数据手册2 | 查看详情 |
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