SIS322DNT-T1-GE3

单 FET,MOSFET

MOSFET N-CH 30V 38.3A PPAK1212-8

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沟道N 沟道
耐压30 V
连续漏极电流38.3 A
导通电阻7.5 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流38.3 A
导通电阻7.5 mΩ最大 · 10A
阈值电压2.4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C38.3A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8
其他
Base Product NumberSIS322
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 15 V
MfrVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+20V, -16V
Vgs(th) (Max) @ Id2.4V @ 250µA

技术资料

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