SIHD6N62ET1-GE3

SIHD6N62ET1-GE3

单 FET,MOSFETTO-252AA

MOSFET N-CH 620V 6A TO252AA

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沟道N 沟道
耐压620 V
连续漏极电流6 A
导通电阻900 mΩ

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技术参数

沟道N 沟道
耐压620 V
连续漏极电流6 A
导通电阻900 mΩ最大 · 3A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drain to Source Voltage (Vdss)620 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)78W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
其他
Base Product NumberSIHD6
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds578 pF @ 100 V
MfrVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs900mOhm @ 3A, 10V
SeriesE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料

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