SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

单 FET,MOSFET

MOSFET N-CH 60V 42.8A/100A PPAK

沟道N 沟道
耐压60 V
连续漏极电流42.8 ~ 100 A
导通电阻1.7 mΩ

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技术参数

沟道N 沟道
耐压60 V
连续漏极电流42.8 ~ 100 A
导通电阻1.7 mΩ最大 · 20A
阈值电压3.4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C42.8A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8DC
其他
Base Product NumberSIDR626
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5130 pF @ 30 V
MfrVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
SeriesTrenchFET® Gen IV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.4V @ 250µA

器件图片

技术资料