MOSFET N-CH 12V 4.5A PPAK SC70-6
沟道N 沟道
耐压12 V
连续漏极电流4.5 A
导通电阻19.8 mΩ
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沟道N 沟道
耐压12 V
连续漏极电流4.5 A
导通电阻19.8 mΩ最大 · 10.8A
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | PowerPAK® SC-70-6 |
| Supplier Device Package | PowerPAK® SC-70-6 |
| 其他 | |
| Base Product Number | SIA406 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 6 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 19.8mOhm @ 10.8A, 4.5V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |