SI2333-TP

SI2333-TP

在产单 FET,MOSFETSOT-23

MOSFET P-CH 12V 6A SOT23

沟道P 沟道
耐压12 V
连续漏极电流6 A
导通电阻150 mΩ

全部替代型号

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技术参数

沟道P 沟道
耐压12 V
连续漏极电流6 A
导通电阻150 mΩ最大 · 500mA
阈值电压1 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V
Power Dissipation (Max)350mW (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
其他
Base Product NumberSI2333
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 6 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs150mOhm @ 500mA, 1.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

器件图片

技术资料