DIODE GEN PURP REV 200V 40A DO5

反向耐压200 V
平均整流电流40 A
正向压降1.1 V
类型标准

全部替代型号

查看完整报告

技术参数

反向耐压200 V
平均整流电流40 A
正向压降1.1 V最大 · 40 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)40A
Current - Reverse Leakage @ Vr10 µA @ 100 V
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.1 V @ 40 A
环境与封装
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction-65°C~190°C
PackageBulk
Package / CaseDO-203AB, DO-5, Stud
Supplier Device PackageDO-5
其他
Base Product NumberS40D
Capacitance @ Vr, F-
Diode TypeStandard, Reverse Polarity
MfrGeneSiC Semiconductor
Product StatusActive
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)

技术资料