DIODE GEN PURP 200V 1A SUB SMA
反向耐压200 V
平均整流电流1 A
正向压降1.1 V
类型标准
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反向耐压200 V
平均整流电流1 A
正向压降1.1 V最大 · 1 A
类型标准Standard Recovery >500ns，> 200mA (Io)
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| 其他 | |
| Base Product Number | S1D |
| Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.8 µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |