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| 电源 | |
|---|---|
| Current - Collector (Ic) (Max) | 50mA |
| Power - Max | 350mW |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Frequency - Transition | 2GHz |
| Gain | 15dB |
| Noise Figure (dB Typ @ f) | 5dB @ 200MHz |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| 其他 | |
| Base Product Number | PN517 |
| Mfr | onsemi |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |