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技术参数

电源
Current - Collector (Ic) (Max)50mA
Power - Max350mW
Voltage - Collector Emitter Breakdown (Max)15V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Frequency - Transition1.5GHz
Gain14dB ~ 26dB
Noise Figure (dB Typ @ f)-
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
其他
MfrFairchild Semiconductor
Product StatusObsolete
Series-
Transistor TypeNPN

器件图片

技术资料