PMDPB65UP,115
NXP USA Inc.荷兰

MOSFET 2P-CH 20V 3.5A SOT1118

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.5A
Drain to Source Voltage (Vdss)20V
Power - Max520mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)
其他
Base Product NumberPMDPB
FET FeatureLogic Level Gate
FET Type2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 10V
MfrNXP USA Inc.
Product StatusObsolete
Rds On (Max) @ Id, Vgs70mOhm @ 1A, 4.5V
Series-
Vgs(th) (Max) @ Id1V @ 250µA

器件图片

技术资料