NTZD5110NT1G
onsemi美国

NTZD5110NT1G

在产FET,MOSFET 阵列

MOSFET 2N-CH 60V 0.294A SOT563

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C294mA
Drain to Source Voltage (Vdss)60V
Power - Max250mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
其他
Base Product NumberNTZD5110
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料