onsemi美国

MTP12P10G

停产晶体管 - FET,MOSFET - 单TO-220

MOSFET P-CH 100V 12A TO220AB

沟道P 沟道
耐压100 V
连续漏极电流12 A
导通电阻300 mΩ

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技术参数

沟道P 沟道
耐压100 V
连续漏极电流12 A
导通电阻300 mΩ最大 · 6A
阈值电压4.5 V最大 · 1mA
电源
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)75W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Base Product NumberMTP12
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V
Mfronsemi
Product StatusObsolete
Rds On (Max) @ Id, Vgs300mOhm @ 6A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 1mA

技术资料