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类型PNP
集射极耐压100 V
集电极电流16 A最大
放大倍数 hFE300Min 300 (IC = 3 Adc，VCE = 4 Vdc，f = 1 kHz)
功率20 W最大 · TC = 25 °C
规格书核对参数
18 项| 参数 | 值和测试条件 | 出处 |
|---|---|---|
| 类型 | PNP | |
| 集射极耐压 | 100 Vdc | |
| 集电极电流 | 8 A (Continuous), 16 A (Peak) | |
| 放大倍数 hFE | Min 300 (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) | |
| 功率 | 20 W @ TC = 25 °C | |
| 封装 | DPAK (Pb-Free) |
全部参数（17 项）
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 10µA |
| Current - Collector (Ic) (Max) | 8 A |
| Power - Max | 1.75 W |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Frequency - Transition | 4MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| 其他 | |
| Base Product Number | MJD127 |
| Mfr | onsemi |
| Product Status | Active |
| Series | - |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
器件图片
技术资料
规格书核对内容由 AI 从原厂规格书提取，点页码查看原文。