MJD122-1

TRANS NPN DARL 100V 8A TO251

类型NPN
集射极耐压100 V
集电极电流8 A
放大倍数 hFE1000

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技术参数

类型NPN
集射极耐压100 V
集电极电流8 A最大
放大倍数 hFE10004A
功率20 W最大
电源
Current - Collector Cutoff (Max)10µA
Current - Collector (Ic) (Max)8 A
Power - Max20 W
Voltage - Collector Emitter Breakdown (Max)100 V
交流 / 直流特性
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition-
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageBulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251 (IPAK)
其他
Base Product NumberMJD122
MfrSTMicroelectronics
Product StatusActive
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A

器件图片

技术资料