IS352
在产The IS352 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar high voltage darlington phototransistor detector in a plastic SOP4 package. With the robust coplanar double mold structure, IS352 series provide the most stable isolation feature.
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| 电源 | |
|---|---|
| Collector Current | I C | 150 | mA |
| Collector - Emitter Voltage | V CEO | 350 | V |
| Emitter - Collector Voltage | V ECO | 0.1 | V |
| Forward Current | I F | 60 | mA |
| Input Power Dissipation | P I | 100 | mW |
| Isolation Voltage | V iso | 3750 | Vrms | 2 |
| Output Power Dissipation | P O | 150 | mW |
| Peak Forward Current | I FP | 1 | A | 1 |
| Reverse Voltage | V R | 6 | V |
| Total Power Dissipation | P tot | 200 | mW |
| 环境与封装 | |
| Operating Temperature | T opr | - 40 ~1 0 0 | °C |
| Soldering Temperature | T sol | 260 | °C |
| Storage Temperature | T stg | -55~125 | °C |
| 其他 | |
| Parameter | Symbol | Value | Unit | Note |