MOSFET P-CH 30V 0.76A SOT-23-3
沟道P 沟道
耐压30 V
连续漏极电流760 mA
导通电阻600 mΩ
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沟道P 沟道
耐压30 V
连续漏极电流760 mA
导通电阻600 mΩ最大 · 600mA
阈值电压1 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 760mA (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 540mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |