MOSFET N-CH 20V 1.2A SOT23
沟道N 沟道
耐压20 V
连续漏极电流1.2 A
导通电阻250 mΩ
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沟道N 沟道
耐压20 V
连续漏极电流1.2 A
导通电阻250 mΩ最大 · 930mA
阈值电压700 mV最大 · 250μA (Min)
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Power Dissipation (Max) | 540mW (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | Micro3™/SOT-23 |
| 其他 | |
| Base Product Number | IRLML2402 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 930mA, 4.5V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |