MOSFET N-CH 55V 51A TO220AB
沟道N 沟道
耐压55 V
连续漏极电流51 A
导通电阻13.9 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压55 V
连续漏极电流51 A
导通电阻13.9 mΩ最大 · 31A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 80W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| 其他 | |
| Base Product Number | IRFZ44 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |