MOSFET N-CH 200V 18A D2PAK
沟道N 沟道
耐压200 V
连续漏极电流18 A
导通电阻150 mΩ
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沟道N 沟道
耐压200 V
连续漏极电流18 A
导通电阻150 mΩ最大 · 11A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Power Dissipation (Max) | 150W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
| Mfr | International Rectifier |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |