ICPL-T1405
在产The ICPL-T1405 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation.For additional component information , please refer to IR and PT.
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| 电源 | |
|---|---|
| 反向电压 Reverse Voltage | V R | 5 | V |
| 发射极 - 集电极电压 Emitter-Col lector Voltage | V ECO | 5 | V |
| 持续正向电流 Forward Current | I F | 50 | mA |
| 脉冲正向电流 Peak Forward Current * 2 | I FP | 1 | A |
| 集电极 - 发射极电压 Collector-Emitter Volta ge | V CEO | 35 | V |
| 集电极电流 Collector Current | I C(ON) | 20 | mA |
| 环境与封装 | |
| 储存温度 Storage Temperatu re | Tstg | -40~+100 | ℃ |
| 工作温度 Operating Tempera ture | Topr | -25~+85 | ℃ |
| 焊接温度 Lead Soldering Temperature* 3 | Tsol | 260 | ℃ |
| 其他 | |
| 测试项目 Parameter （ Ta=25 ℃) | 符合 Symbol | 范围 Ratings | 单位 Unit |
| 输入端发射极 Input Emitter | 功率 Power Dissipation * 1 | Pd | 75 | mW |
| 输出端接收极 Output Detector | 功率 Power Dissipation * 1 | Pd | 75 | mW |