DIODE GEN PURP 400V 12A DO4

反向耐压400 V
平均整流电流12 A
正向压降800 mV
类型标准

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技术参数

反向耐压400 V
平均整流电流12 A
正向压降800 mV最大 · 12 A
类型标准Fast Recovery =< 500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)12A
Current - Reverse Leakage @ Vr25 µA @ 100 V
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If800 mV @ 12 A
环境与封装
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction-65°C ~ 150°C
Package / CaseDO-203AA, DO-4, Stud
Supplier Device PackageDO-4
其他
Capacitance @ Vr, F-
MfrGeneSiC Semiconductor
PackagingBulk
Part StatusActive
Reverse Recovery Time (trr)500 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

技术资料