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技术参数

电源
Current - Continuous Drain (Id) @ 25°C3.8A, 2.5A
Drain to Source Voltage (Vdss)30V
Power - Max850mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackageTSOT-26
其他
Base Product NumberDMG6601
FET FeatureLogic Level Gate
FET TypeN and P-Channel
Gate Charge (Qg) (Max) @ Vgs12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds422pF @ 15V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs55mOhm @ 3.4A, 10V
Series-
Vgs(th) (Max) @ Id1.5V @ 250µA

技术资料