BSS84
MDD德国

MOSFET SOT-23 P Channel 50V

沟道P 沟道
耐压50 V
连续漏极电流130 mA
导通电阻8 Ω

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技术参数

沟道P 沟道
耐压50 V
连续漏极电流130 mA
导通电阻8 Ω最大 · 100mA
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C130mA (Ta)
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)225mW (Ta)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
其他
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds30 pF @ 5 V
MfrMDD
Product StatusActive
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 10V
SeriesSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料