BSM150GB120DN2HOSA1

不推荐用于新设计晶体管 - IGBT - 模块

IGBT MOD 1200V 210A 1250W

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技术参数

电源
Current - Collector Cutoff (Max)2.8 mA
Current - Collector (Ic) (Max)210 A
Power - Max1250 W
Voltage - Collector Emitter Breakdown (Max)1200 V
环境与封装
Mounting TypeChassis Mount
Operating Temperature150°C(TJ)
PackageTray
Package / CaseModule
Supplier Device PackageModule
其他
Base Product NumberBSM150
ConfigurationHalf Bridge
IGBT Type-
InputStandard
Input Capacitance (Cies) @ Vce11 nF @ 25 V
MfrInfineon Technologies
NTC ThermistorNo
Product StatusNot For New Designs
Series-
Vce(on) (Max) @ Vge, Ic3V @ 15V, 150A

技术资料

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