BAS16T116

停产二极管 - 整流器 - 单TO-236-3

DIODE GEN PURP 80V 100MA SSD3

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反向耐压80 V
平均整流电流100 mA
正向压降1.2 V
类型标准

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技术参数

反向耐压80 V
平均整流电流100 mA
正向压降1.2 V最大 · 100 mA
类型标准Small Signal =< 200mA (Io)
电源
Current - Average Rectified (Io)100mA
Current - Reverse Leakage @ Vr100 nA @ 70 V
Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 100 mA
环境与封装
Mounting TypeSurface Mount
Operating Temperature - Junction150°C
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSSD3
其他
Base Product NumberBAS16
Capacitance @ Vr, F3.5pF @ 6V, 1MHz
Diode TypeStandard
MfrRohm Semiconductor
Product StatusObsolete
Reverse Recovery Time (trr)4 ns
Series-
SpeedSmall Signal =< 200mA (Io), Any Speed

技术资料

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