Power MOS 7 is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds.
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| 电源 | |
|---|---|
| Continuous Drain Current Max (Ampere) | 27 |
| Drain Source Voltage Max V (volt) | 500 |
| Power Dissipation (W) [max] | 300 |
| 环境与封装 | |
| Package | TO-247-3 |
| 其他 | |
| Input Capacitance (pF) [Typ] | 2596 |
| On-State Resistance (milliohms) [max] (mΩ) | 180 |
| Part Type | MOSFET |
| Reverse Recovery Charge (Qrr) (µC) [Typ.] | 8 |
| Technology | MOS 7 |
| Total Gate Charge (nC) [Typ] | 58 |
| Turn Off Switching Energy [Eoff] (µJ) [Typ.] | 134 |
| Turn On Switching Energy [Eon] (µJ) [Typ.] | 216 |
技术资料
数据手册数据手册 · 1.5 MB · 2026-09-23宣传资料宣传资料 · 22.4 MB · 2026-09-23应用笔记应用笔记 · 725.6 KB · 2026-09-23应用笔记应用笔记 · 509.4 KB · 2026-09-23应用笔记应用笔记 · 374.0 KB · 2026-09-23应用笔记应用笔记 · 296.3 KB · 2026-09-23应用笔记应用笔记 · 241.7 KB · 2026-09-23应用笔记应用笔记 · 238.0 KB · 2026-09-23应用笔记应用笔记 · 227.5 KB · 2026-09-23应用笔记应用笔记 · 225.3 KB · 2026-09-23应用笔记应用笔记 · 221.1 KB · 2026-09-23应用笔记应用笔记 · 205.0 KB · 2026-09-23应用笔记应用笔记 · 144.0 KB · 2026-09-23变更与勘误变更与勘误 · 115.7 KB · 2026-09-23应用笔记应用笔记 · 115.3 KB · 2026-09-23
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