The APT15GN120BDQ1G is a discrete 1200V Field Stop IGBT designed to deliver both efficiency and ruggedness in demanding power systems. It supports up to 45A continuous collector current and 45A pulsed, with a maximum power dissipation of 195W. With a low collector-emitter saturation voltage, it minimizes conduction losses and helps improve overall system efficiency. We’ve also engineered it for fast, controlled switching with efficient gate drive design. Rated for operation up to 175 °C, our device maintains reliable performance even in harsh environments.
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| 电源 | |
|---|---|
| Collector-Emitter Voltage [VCES] (V) | 1200 |
| Continuous Collector Current [IC] (A) [@ 110° max] | 22 |
| Continuous Collector Current [IC] (A) [@ 25° max] | 45 |
| Gate Threshold Voltage [VGE(TH)] (V) [Typ.] | 5.8 |
| Power Dissipation (W) [max] | 195 |
| Pulsed Collector Current [ICM] (A) | 45 |
| 环境与封装 | |
| Package | TO-247 |
| 其他 | |
| Configuration | Co-Packaged |
| Diode | Ultra-Fast DQ |
| Part Type | Discrete IGBT |
| Technology | Field-Stop |
器件图片
技术资料
数据手册数据手册 · 166.2 KB · 2026-09-23宣传资料宣传资料 · 22.4 MB · 2026-09-23应用笔记应用笔记 · 1.0 MB · 2026-09-23宣传资料宣传资料 · 876.0 KB · 2026-09-23应用笔记应用笔记 · 374.0 KB · 2026-09-23应用笔记应用笔记 · 247.5 KB · 2026-09-23应用笔记应用笔记 · 241.7 KB · 2026-09-23应用笔记应用笔记 · 237.9 KB · 2026-09-23应用笔记应用笔记 · 221.1 KB · 2026-09-23变更与勘误变更与勘误 · 115.7 KB · 2026-09-23应用笔记应用笔记 · 89.2 KB · 2026-09-23
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