A2T27S020N
RF FET，MOSFETThe A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
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The A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.
该型号暂未提供技术参数。
该型号暂未收录资料。