Silicon PNP epitaxial planar transistor
集射极耐压-50 V
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集射极耐压-50 V
| 环境与封装 | |
|---|---|
| Automotive Qualified | NO |
| Package | TO3PF-3L |
| Package Weight (Typ.) | 6.5 g |
| RoHS | YES |
| 其他 | |
| Application | general purpose |
| Chip Division | Single |
| Clamp Diode | NO |
| hFECondition IC | -5.0 A |
| hFECondition VCE | -1 V |
| hFE (min.) | 50 |
| IC (-) | -12 A |
| PC | 60.0 W |
| Polarity | PNP |
| VCBO | -70 V |
| VCEO | -50 V |
| VCE(SAT) (max.) | -0.50 V |