2N7002VC-7

MOSFET 2N-CH 60V 0.28A SOT563

双N沟道增强型MOSFET，60V耐压，SOT-563封装，低导通电阻，RoHS合规。规格书核对

全部替代型号

21 项

参数	值和测试条件	出处
封装	SOT-563
工作温度	-55 to +150 °C
RoHS	Lead Free By Design/RoHS Compliant
无卤	Green Device
漏源电压	60 V
栅源电压	Continuous ±20 V, Pulsed ±40 V
漏极电流	Continuous 280 mA, Pulsed 1.5 A
总耗散功率	150 mW
结到环境热阻	833 °C/W
漏源击穿电压	Min 60 V, Typ 70 V, VGS=0V, ID=10μA
零栅压漏极电流	Max 1.0 μA @ TC=25°C, Max 500 μA @ TC=125°C, VDS=60V, VGS=0V
栅体漏电流	Max ±100 nA, VGS=±20V, VDS=0V
栅极阈值电压	Min 1.0 V, Max 2.5 V, VDS=VGS, ID=250μA
静态漏源导通电阻	Max 7.5 Ω @ VGS=5V, ID=0.05A; Max 13.5 Ω @ VGS=10V, ID=0.5A, Tj=125°C
导通状态漏极电流	Min 0.5 A, Typ 1.0 A, VGS=10V, VDS=7.5V
正向跨导	Min 80 mS, VDS=10V, ID=0.2A
输入电容	Max 50 pF, VDS=25V, VGS=0V, f=1.0MHz
输出电容	Max 25 pF, VDS=25V, VGS=0V, f=1.0MHz
反向传输电容	Max 5.0 pF, VDS=25V, VGS=0V, f=1.0MHz
开通延迟时间	Max 20 ns, VDD=30V, ID=0.2A, RL=150Ω, VGEN=10V, RGEN=25Ω
关断延迟时间	Max 20 ns, VDD=30V, ID=0.2A, RL=150Ω, VGEN=10V, RGEN=25Ω

全部参数（19 项）展开收起

电源
Current - Continuous Drain (Id) @ 25°C	280mA
Drain to Source Voltage (Vdss)	60V
Power - Max	150mW
环境与封装
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563
其他
Base Product Number	2N7002
Configuration	2 N-Channel (Dual)
FET Feature	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Mfr	Diodes Incorporated
Product Status	Active
Rds On (Max) @ Id, Vgs	7.5Ohm @ 50mA, 5V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

规格书核对内容由 AI 从原厂规格书提取，点页码查看原文。