VS-1N5817TR 国产替代 型号

原型号

VI

Vishay General Semiconductor - Diodes DivisionVS-1N5817TR

Base Product Number1N5817Capacitance @ Vr, F110pF @ 5V, 1MHzCurrent - Average Rectified (Io)1ACurrent - Reverse Leakage @ Vr1 mA @ 20 V