G5S12016BM 国产替代 型号

原型号

GL

Global Power Technology-GPTG5S12016BM

Current - Average Rectified (Io) (per Diode)27.9A (DC)Current - Reverse Leakage @ Vr50 µA @ 1200 VDiode Configuration1 Pair Common CathodeDiode TypeSilicon Carbide Schottky