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G3S12002H 国产替代 型号

原型号
Global Power Technology-GPTG3S12002H
Capacitance @ Vr, F136pF @ 0V, 1MHzCurrent - Average Rectified (Io)7.3ACurrent - Reverse Leakage @ Vr50 µA @ 1200 VDiode TypeSilicon Carbide Schottky