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G3S06506B 国产替代 型号

G3S06506B
原型号
Global Power Technology-GPTG3S06506B
Current - Average Rectified (Io) (per Diode)14A (DC)Current - Reverse Leakage @ Vr50 µA @ 650 VDiode Configuration1 Pair Common CathodeDiode TypeSilicon Carbide Schottky